Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film's Properties and Their Applications to the Source-Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)
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The optical, electrical, and material properties of In-Zn-O (IZO) films were optimized by adjusting the deposition power and annealing temperature. Films deposited at 125 W and annealed at 300 °C exhibited the best performance, with the lowest resistivity (1.... ...
