Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy
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Alternating metal-modulated molecular beam epitaxy enables the growth of both self-assembled c-InGaN/GaN quantum wells and fully alloyed c-InGaN layers. In situ reflection high-energy electron diffraction (RHEED) analysis coupled with ex situ structural charac... ...
