Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors
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This study explores the area-dependent resistive switching (RS) characteristics of Gd0.2Ca0.8MnO3 (GCMO)-based memristors with aluminum (Al) and gold (Au) electrodes, emphasizing their potential for neuromorphic computing applications. Using a combination of e... ...
