Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers
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In this work, AlGaN/GaN high-electron-mobility transistors (HEMTs) with a nanocrystalline diamond (NCD)/SiNx trench dual-passivated (TDP) structure were promoted, which demonstrated superior performance with a higher saturation output current (Idss) of 1.266 A... ...
