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Review Nature reviews. Chemistry. 2025 Apr 7. doi: 10.1038/s41570-025-00702-w Q138.12024

Multifaceted nature of defect tolerance in halide perovskites and emerging semiconductors

卤化物钙钛矿和新兴半导体的耐缺陷多面性 翻译改进

Irea Mosquera-Lois  1, Yi-Teng Huang  2, Hugh Lohan  1  2, Junzhi Ye  2, Aron Walsh  3, Robert L Z Hoye  4

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作者单位

  • 1 Department of Materials, Imperial College London, London, UK.
  • 2 Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, Oxford, UK.
  • 3 Department of Materials, Imperial College London, London, UK. a.walsh@imperial.ac.uk.
  • 4 Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, Oxford, UK. robert.hoye@chem.ox.ac.uk.
  • DOI: 10.1038/s41570-025-00702-w PMID: 40195529

    摘要 中英对照阅读

    Lead halide perovskites (LHPs) have shot to prominence as efficient energy-conversion materials that can be processed using cost-effective fabrication methods. A reason for their exceptional performance is their crystallographic defect tolerance, enabling long charge-carrier lifetimes despite high defect densities. Achieving defect tolerance in broader classes of materials would impact on the semiconductor industry substantially. Considerable efforts have been made to understand the origins of defect tolerance, so as to design stable and nontoxic alternatives to LHPs. However, understanding defect tolerance in LHPs is far from straightforward. This Review discusses the models proposed for defect tolerance in halide perovskites, evaluating the experimental and theoretical support for these models, as well as their limitations. We also cover attempts to apply these models to identify materials beyond LHPs that could exhibit defect tolerance. Finally, we discuss the experimental methods used to understand defects in mixed ionic-electronic conductors, as well as the important information that is necessary for a deeper understanding, in order to develop improved models that enable the design of defect-tolerant semiconductors.

    Keywords:halide perovskites; defect tolerance; semiconductors

    铅卤钙钛矿(LHP)作为一种高效的能量转换材料,由于可以使用成本效益高的制造方法而迅速受到关注。它们卓越性能的一个原因是其晶体缺陷容限性,这使得即使在高缺陷密度的情况下也能保持长的载流子寿命。如果能在更广泛的材料类别中实现这种缺陷容限性,则会对半导体行业产生重大影响。为了设计稳定且无毒的LHP替代品,人们已经付出了大量努力来理解缺陷容限性的起源。然而,对铅卤钙钛矿的缺陷容限性的理解远非简单明了。本综述讨论了为解释铅卤钙钛矿中的缺陷容限性而提出的各种模型,并评估这些模型在实验和理论上的支持以及它们的局限性。我们还涵盖了将这些模型应用于识别可能表现出类似缺陷容限性的LHP之外材料的努力。最后,我们将讨论用于理解混合离子-电子导体中缺陷的实验方法,以及为了发展更好的模型、设计出具有缺陷容限性的半导体所需的重要信息。

    关键词:卤化物钙钛矿; 缺陷容忍度; 半导体

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    期刊名:Nature reviews chemistry

    缩写:NAT REV CHEM

    ISSN:2397-3358

    e-ISSN:

    IF/分区:38.1/Q1

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