Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment
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A two-step annealing treatment was applied on a fully transparent amorphous InGaZnO4 (a-IGZO) top-gate thin-film transistor (TG-TFT) to improve the device performance. The electrical properties and stabilities of a-IGZO TG TFTs were significantly improved as t... ...
