Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
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Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. This demands high-qual... ...
