Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors
{{output}}
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS2). Semiconductor-oxide heterostructures are achieved by lo... ...
