Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature
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An unexpected rapid anneal of electrically active defects in an ultrathin (15.5 nm) polar polyimide film at and below glass transition temperature (T g) is reported. The polar polymer is the gate dielectric of a thin-film-transistor. Gate leakage current densi... ...
