Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1- xN nanowires with bright red photoluminescence
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Increasing the InN content in the InxGa1-xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InxGa1-xN nanowires gr... ...
