Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition
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Heteroepitaxy of gallium oxide (Ga2O3) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga2O3 on 4H-SiC (0001) substrat... ...
