Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket
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In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high ION current. By optimizing the... ...
