Trade-off between Gradual Set and On/Off Ratio in HfOx-Based Analog Memory with a Thin SiOx Barrier Layer
{{output}}
HfOx-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in oxide-based synapses is caused by the motion of oxygen vacancies. HfOx-based synapses typically demonstrate an abrupt nonlinear re... ...
