Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
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In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopan... ...
