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Nature communications. 2023 Jun 10;14(1):3430. doi: 10.1038/s41467-023-38556-9 Q115.72025

Exciton transport in atomically thin semiconductors

原子薄半导体中的激子输运 翻译改进

Ermin Malic  1, Raül Perea-Causin  2, Roberto Rosati  3, Daniel Erkensten  2, Samuel Brem  3

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作者单位

  • 1 Department of Physics, Philipps-Universität Marburg, 35032, Marburg, Germany. ermin.malic@uni-marburg.de.
  • 2 Department of Physics, Chalmers University of Technology, 412 96, Gothenburg, Sweden.
  • 3 Department of Physics, Philipps-Universität Marburg, 35032, Marburg, Germany.
  • DOI: 10.1038/s41467-023-38556-9 PMID: 37301820

    摘要 Ai翻译

    Atomically thin semiconductors have been in the center of one of the most active research fields. Here, we discuss the main challenges in exciton transport that is crucial for nanoelectronics. We focus on transport phenomena in monolayers, lateral heterostructures, and twisted heterostacks of transition metal dichalcogenides. 点击完成人机验证后继续浏览
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    期刊名:Nature communications

    缩写:NAT COMMUN

    ISSN:N/A

    e-ISSN:2041-1723

    IF/分区:15.7/Q1

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    Exciton transport in atomically thin semiconductors