Oxygen-ion conductors have traditionally been studied in the context of high temperature (≈ 873 to 1773 K) energy conversion and sensor technologies. However, there is growing interest in exploring ion-based electronics for harsh environments (400 to 573 K) that represents an emerging field. Here, we utilize a blocking electrode to modify the interface properties of oxygen-ion conducting yttria-stabilized zirconia (YSZ) thin film electrochemical cells. The modified YSZ cell exhibits negative differential resistance (NDR) in the current-voltage curves at 543 K in the air. A double-sweep method and analysis of the scan-rate dependence of the j-V characteristics clearly suggest that the NDR behavior is formed by the reduction reaction of adsorbed oxygen or platinum oxide at the YSZ/Pt interface. A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect, we demonstrate a proof-of-concept switchable ternary inverter by interfacing with a silicon transistor. Oxygen-ion conductors and their interfaces offer new directions to design electronics for extreme environments.

Keywords: YSZ; high-temperature electronics; ionic conductors; negative differential resistance; oxide films; porous Pt.