C-V-f, G-V-f and Z″-Z' Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition
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n-Type Si/p-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance-voltage-frequency (C-V -f) and conductance-voltage-frequency (G-V ... ...
