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Published Erratum Nanoscale. 2018 Dec 20;11(1):365. doi: 10.1039/c8nr90273a Q15.12025

Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Correction:化学气相沉积生长的大面积单层WSe2晶体的受控p型掺杂研究 翻译改进

Sushil Kumar Pandey  1, Hussain Alsalman, Javad G Azadani, Nezhueyotl Izquierdo, Tony Low, Stephen A Campbell

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  • 1 Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street, Minneapolis, Minnesota 55455, USA. campb001@umn.edu.
  • DOI: 10.1039/c8nr90273a PMID: 30534732

    摘要 Ai翻译

    Correction for 'Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition' by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374-21385. 点击完成人机验证后继续浏览
    Copyright © Nanoscale. 中文内容为AI机器翻译,仅供参考!

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    期刊名:Nanoscale

    缩写:NANOSCALE

    ISSN:2040-3364

    e-ISSN:2040-3372

    IF/分区:5.1/Q1

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    Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition