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Surface science. 2016 Oct:652:200-205. doi: 10.1016/j.susc.2016.03.025 Q42.12024

EUV-induced oxidation of carbon on TiO2

极紫外诱导的TiO2表面碳氧化反应 翻译改进

Nadir S Faradzhev  1, Shannon B Hill  1

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  • 1 National Institute of Standards and Technology Gaithersburg, MD 20899, USA.
  • DOI: 10.1016/j.susc.2016.03.025 PMID: 27458322

    摘要 Ai翻译

    Previously we reported estimates of the maximum etch rates of C on TiO2 by oxidizers including NO, O3 and H2O2 when irradiated by a spatially-non-uniform beam of extreme ultraviolet (EUV) radiation at 13.5 nm (Faradzhev et al., 2013). Here we extend that work by presenting temporally and spatially resolved measurements of the C etching by these oxidizers as a function of EUV intensity in the range (0.3 to 3) mW/mm2 [(0.2 to 2) × 1016 photons s-1 cm-2]. We find that the rates for NO scale linearly with intensity and are smaller than those for O3, which exhibit a weak, sub-linear intensity dependence in this range. We demonstrate that these behaviors are consistent with adsorption of the oxidizing precursor on the C surface followed by a photon-stimulated reaction resulting in volatile C-containing products. The kinetics of photon-induced C etching by hydrogen peroxide, however, appear to be more complex. The spatially resolved measurements reveal that C removal by H2O2 begins at the edges of the C spot, where the light intensity is the lowest, and proceeds toward the center of the spot. This localization of the reaction may occur because hydroxyl radicals are produced efficiently on the catalytically active TiO2 surface.

    Keywords: Carbon etching; Extreme ultraviolet; Hydrogen peroxide; Photo-oxidation; Strong oxidizer; TiO2.

    Keywords:euv induced oxidation; carbon oxidation; titanium dioxide

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    期刊名:Surface science

    缩写:SURF SCI

    ISSN:0039-6028

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    IF/分区:2.1/Q4

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