Journal of nanoscience and nanotechnology. 2013 Sep;13(9):6451-4. doi: 10.1166/jnn.2013.7629 0.02025
Device/Circuit co-design guide for passive memristor array with non-linear current-voltage behavior
具有非线性电流电压特性的被动忆阻器阵列的器件/电路协同设计指南 翻译改进
Seok-Jin Ham 1, Jeong-Heon Kim, Kyeong-Sik Min
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作者单位
1 School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea.
DOI: 10.1166/jnn.2013.7629 PMID: 24205681
摘要 Ai翻译
In this paper, the non-linearity in memristor's current-voltage relationship that can affect half-selected cells is analyzed. From the simulation, for the V(DD)/2 scheme, if the non-linear coefficient is larger than 8, unwanted resistance loss during the write time can be suppressed less than 10%. Comparing the V(DD)/2 and V(DD)/3 scheme, the V(DD)/2 scheme can reduce the current consumption by 2 orders of magnitude with little larger resistance change in ... ...点击完成人机验证后继续浏览
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