Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks
{{output}}
The paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2 high-k dielectrics deposited by Atomic Layer Deposition to be applied in Ge-based MOSFET devices. Improved electrical properties of these multilayered gate stacks exposed to ... ...
