Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
{{output}}
The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge a... ...
