Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors
{{output}}
The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the corr... ...
