Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
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Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the g... ...
